The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 1996
Filed:
Mar. 15, 1993
Applicant:
Inventors:
Bertrand F Cambou, Mesa, AZ (US);
James G Gilbert, Chandler, AZ (US);
Gregory L Hansell, Tempe, AZ (US);
Assignee:
Motorola, Inc,, Schaumburgh, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 39 ; 437912 ;
Abstract
A method of fabricating a MESFET is comprised of providing a semiconductor material having a channel region formed therein, forming a gate on the semiconductor material over the channel region, forming a spacer adjacent a first portion of the gate disposed on the semiconductor material, and forming a hard mask disposed on a second portion of the gate and on a portion of the semiconductor material.