The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 1996
Filed:
Dec. 16, 1994
Chihiro Ogawa, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
An insular shaped polycrystalline silicon film is formed by adhering its entire bottom face to the surface of a insulation film which is formed on the main face of a silicon substrate. A resistance element which contains designated impurities is formed in the central part of the polycrystalline silicon film. A non-doping region which essentially does not contain impurities and is adheres to all the sides of the resistance element, is positioned on the peripheral region except for the central part of the polycrystalline silicon film. By performing heat treatment when a non-doping amorphous silicon pattern is formed on the insulating film, the amorphous silicon pattern is convened to a non-doping polycrystalline silicon pattern. By using this method, a semiconductor device which has only small variances in its resistance value, which provides more efficient heat radiation, and which enables higher integration of a silicon substrate can be obtained.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile