The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 1996
Filed:
Dec. 27, 1994
Hiromi Hayashi, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor device and a method for manufacturing a semiconductor device having local interconnections for making electrical connection among conductive regions. The semiconductor device and the method for manufacturing the same utilizes interconnections made of a material of which selectivity of etching is high with respect to a semiconductor layer. The local interconnection is formed by patterning a tungsten nitride film with an etchant gas including a gas comprising fluorine. In addition to the gas comprising fluorine, a gas comprising hydrogen is introduced, at the latest, when the tungsten nitride film becomes thinned.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile