The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 1996
Filed:
Mar. 31, 1995
Sung K Kwon, Ichonkun, KR;
Abstract
A method for forming a field oxide layer in a semiconductor device comprising the steps of: forming a pad oxide layer and a first resistant layer of oxidation, in turn, on a substrate; opening a field region by etching a portion of the said resistant layer of oxidation, whereby a part of the said pad oxide layer remains; forming the pad oxide layer into a nitric oxide layer; forming a second and a third resistant layer of oxidation, in turn, on a resultant structure; forming a spacer layer by applying anisotropic etching to the third resistant layer of oxidation; exposing a portion of the substrate by etching the second resistant layer of oxidation and the pad layer which is formed into the nitride layer; and forming the field oxide layer by oxidizing the substrate.