The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 1996
Filed:
Mar. 31, 1995
Yong K Kim, Kyunkgi, KR;
LG Semicon Co., Ltd., Seoul, KR;
Abstract
A method for fabricating a charge coupled device (CCD) image sensor including the steps of: forming a plurality of photoelectric conversion regions and a plurality of vertical charge coupled device (VCCD) regions by a selective injection of second conductivity-type ions into a first conductivity-type semiconductor substrate; forming a plurality of transfer gate electrodes over the plurality of VCCD regions for transmitting image signal charges in four phases after forming a gate insulation film on the entire surface; depositing a first insulation film on the entire surface, and forming light shielding metal thereon; forming a first metal layer by selective removal of the optical shielding metal over the plurality of photoelectric conversion regions and the plurality of VCCD regions; forming contact holes for exposing the transfer gate electrodes the same clock signals applied thereto within one VCCD region of the plurality of VCCD regions, after depositing a second insulation film on the entire surface; and forming a second metal layer by depositing optical shielding and conductive metal on the entire surface, and carrying out patterning leaving the metal only on the plurality of the VCCD regions.