The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 1996

Filed:

Aug. 31, 1994
Applicant:
Inventors:

Gardy Cadet, Orange, NJ (US);

Ronald A Holland, Orange, NJ (US);

James W Mitchell, Somerset, NJ (US);

Jorge L Valdes, Bedminster, NJ (US);

Assignee:

AT&T Corp., Murray Hill, NJ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C25B / ; C23C / ; H05H / ; H05H / ;
U.S. Cl.
CPC ...
205549 ; 427255 ; 427574 ; 427578 ;
Abstract

The present invention provides improved processes and apparatus for fabrication of articles having silicon-containing regions. The process comprises generating silane by electrochemical reaction with a silicon-containing precursor material. An electrochemical cell generates H.sup.+ species which react with silicon from the precursor material to form a silane. The silane is used to deposit a silicon-containing article region. An apparatus for fabricating an article having a silicon-containing region is also provided. The fabrication system includes a reaction chamber having a gas supply line communicating with a silane-generating electrochemical cell. The electrochemical cell includes a first electrode for generating a supply of H.sup.+ ions, a silicon-containing precursor material in communication with the first electrode, a second electrode, and a receptacle for retaining an electrolyte. Advantageously, the present invention eliminates the need for long-term storage and transport of silane by generating silane at the site of device fabrication.


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