The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 1996
Filed:
Jun. 06, 1995
Stanley D Brotherton, Forest Row, GB;
John R Ayres, Crawley, GB;
U.S. Philips Corporation, New York, NY (US);
Abstract
A thin film field effect transistor (1) is formed by an insulating substrate (2,3) carrying a semiconductor layer (4) having a polycrystalline channel region (5) which is passivated to reduce the density of charge carrier traps. Source and drain electrodes (6 and 7) contact opposite ends (5a,5b) of the channel region (5), and a gate electrode (8) is provided at one major surface (4a) of the semiconductor layer (4) for controlling a conduction channel of one conductivity type in the polycrystalline channel region (5) to provide a gateable connection between the source and drain electrodes (6 and 7). An area (50) of the polycrystalline channel region (5) spaced from the electrodes (6,7,8) of the transistor (1) and lying adjacent to the other major surface (4b) of the semiconductor layer (4) is doped with impurities of the opposite conductivity type for suppressing formation of a conduction channel of the one conductivity type adjacent to the other major surface (4b).