The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 1996
Filed:
Aug. 23, 1994
Applicant:
Inventors:
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257617 ; 257192 ; 257197 ;
Abstract
Disclosed is a semiconductor device capable of suppressing the generation of dislocations due to the difference in lattice constant by insertion of one or more defect type compound layers in a semiconductor layered structure. The strain generated by the mismatch of the lattice is relaxed by a large amount of vacancies contained in the defect type compound layer, to suppress the generation and the propagation of dislocations, thus inexpensively fabricating a semiconductor device with less deterioration of the characteristics due to defects with good repeatability.