The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 1996
Filed:
Jul. 25, 1995
Tomoyuki Uchiyama, Tokyo, JP;
Nippon Steel Corporation, Tokyo, JP;
Abstract
A semiconductor device including a pair of transistors, comprises: a semiconductor substrate; a pair of gate electrodes formed in one surface of the semiconductor substrate at first portions thereof, respectively, and spaced from each other with a second portion of the semiconductor substrate therebetween; and two spaced source/drain diffused regions formed in the second portion of the semiconductor substrate and insulated from the gate electrodes. Each pair of transistors is formed of one of the gate electrodes, the source/drain diffused regions which are common to the pair of transistors, and a part of the second portion of the semiconductor substrate disposed between the source/drain diffused regions serving as a channel region common to the pair of transistors.