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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5508522 B1

PDFFull Text
Date of Patent:
Apr. 16, 1996

Filed:

Dec. 17, 1993

Method for producing a group ii-vi compound semiconductor thin film and

Applicant:
Inventors:

Kenji Nakanishi, Chiba, JP;

Masahiko Kitagawa, Tottori, JP;

Yoshitaka Tomomura, Nara, JP;

Shinya Hirata, Tenri, JP;

Assignee:

Sharp Kabushiki Kaisha, Osaka, JP;

Attorney:

Morrison & Foerster

Primary Examiner:

Sara W Crane

Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 13 ; 257 94 ; 257103 ; 257201 ; 257627 ; 257628 ;
Abstract

A method for fabricating a semiconductor thin film is disclosed. The method includes the step of epitaxially growing a semiconductor layer made of a group II-VI compound semiconductor to have a thickness of at least one atomic layer or more, on a main plane of a single-crystal semiconductor substrate, the semiconductor substrate having one of a diamond structure and a zinc blende structure, the main plane being inclined by an angle in the range of 2 to 16 degrees with respect to a (100) plane.

Find Patent Forward Citations

Nakanishi, Kenji. (1996). Method for producing a group ii-vi compound semiconductor thin film and (U.S. Patent No. 5508522). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5508522

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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