The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 1996
Filed:
Jun. 01, 1994
Masami Sawada, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A vertical type field effect transistor includes N-type base regions formed on the surface of a P-type semiconductor substrate, a P-type source region formed in each of the N-type base regions, a gate insulating film formed between the P-type source regions, and a gate electrode formed of polysilicon on the gate insulating film. The transistor has the P-type source regions, the N-type base regions and a lower portion of the P-type semiconductor substrate as three terminals. A method for manufacturing the transistor comprises the steps of: forming the gate insulating film; growing a polysilicon layer; performing ion injection of an N-type impurity for the grown polysilicon layer; and performing heat treatment after the ion injection.