The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 1996
Filed:
Oct. 20, 1994
U.S. Philips Corporation, New York, NY (US);
Abstract
A method of manufacturing a semiconductor device whereby on a surface (3) of a semiconductor body (1) a conductor track (21) of polycrystalline silicon insulated from the surface (3) is provided in a layer of doped polycrystalline silicon (11) provided on a layer of insulating material (10), and whereby a strip of polycrystalline silicon (19, 35) is formed between an edge (18) of the conductor (21) and a portion (24, 34) of the surface (3) adjoining the edge (18), after which a semiconductor zone (30) is formed through diffusion of dopant from the conductor (21) through the strip (19, 35) into the semiconductor body (1). During the formation of the insulated conductor (21) and the strip of polycrystalline silicon (19, 35), a window (15) is etched into the layer of polycrystalline silicon (11) by means of a first etching mask (13), after which the insulating layer (10) is removed from the surface (3) within the window (15), the window (15) is provided at its edge (18) with a strip of polycrystalline silicon (19, 35), and the conductor (21) is etched into the layer of polycrystalline silicon (11) by means of a second etching mask (20), this second etching mask (20) covering at least a portion of the edge (18) of the window (15). Further conductors (22, 23) may be formed in the polycrystalline layer (11) next to the insulated conductor (21), all conductors (21, 22, 23) being given dimensions such as defined by the second etching mask (20).