The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 1996

Filed:

Mar. 28, 1995
Applicant:
Inventors:

Gregory S Glenn, Pacific Palisades, CA (US);

B Terence Cavicchi, North Hollywood, CA (US);

Assignee:

Spectrolab, Inc., Sylmar, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437-2 ; 136256 ; 216 52 ; 257466 ; 437-5 ; 437226 ; 437249 ;
Abstract

Thin semiconductor devices, such as thin solar cells, and a method of fabricating same are disclosed. A microblasting procedure is employed to thin a semiconductor wafer or substrate, such as a solar cell wafer, wherein fine abrasive particles are used to etch away wafer material through a mask. Thick areas remain at the perimeter of the semiconductor device or solar cell, in regions of the semiconductor device or solar cell behind the front interconnect attachment pads, and at corresponding rear interconnect attachment areas. In addition, there are thick areas in a pattern that comprise interconnected beams that support the thin wafer areas. Consequently, predetermined areas of the wafer are thinned to form a predetermined structural pattern in the wafer that includes an external frame and a plurality of interconnected beams. The final configuration of the semiconductor device or solar cell has approximately 20% of the area at the original wafer thickness with the remaining 80% etched away to a relatively thin thickness.


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