The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 1996
Filed:
Dec. 23, 1994
Masahiko Hyugaji, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
An N-InP buffer layer is deposited on an N.sup.+ -InP substrate, an InGaAs light-absorbing layer is deposited on the buffer layer, an N.sup.- -InP cap layer is deposited on the light-absorbing layer, and a P-type impurity region is formed in the light-absorbing layer and the cap layer. Next, a masking film is formed on the cap layer, and with this masking film serving as a mask, the cap layer, the light-absorbing layer, the buffer layer are etched, thus forming a P-type electrode forming region and an N-type electrode forming region. Next, an insulating film is provided for the periphery portion of the P-type impurity region of the cap layer. Electrode pads having a laminated structure is formed respectively on the P-type and N-type electrode forming regions, and a non-metal member is formed on the insulating film and on the surface, the periphery and the side surface of the electrode pad of the P-type electrode.