The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 1996
Filed:
Aug. 06, 1992
Kabushiki Kaisha Tokai Rika Denki Seisakusho, Aichi, JP;
Abstract
An object of this invention is to make it possible to directly monitor a temperature of a transistor chip. According to the present invention, p.sup.- region is formed on a substrate of a p.sup.+ layer by epitaxial growth. A first n-type diffusion layer which is a base region, and a second n-type diffusion layer which forms a temperature detecting element are formed in the p.sup.- region. A first p.sup.+ diffusion layer which is an emitter region is formed in the first n-type diffusion layer, while a second p.sup.+ diffusion layer which forms the temperature detecting element is formed in the second n-type diffusion layer. The temperature detecting element is operated in the active region, so that a characteristic free from variations in collector potential is obtained for the base-emitter potential difference of the temperature detecting element and the temperature of the junction thereof. Owing to this characteristic, the temperature of the junction can be detected from the base-emitter potential difference of the temperature detecting element during operation of the transistor.