The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 1996
Filed:
Feb. 22, 1994
Yoshitaka Sakaue, Nara, JP;
Eiji Ohno, Hirakata, JP;
Kazuhisa Ide, Osaka, JP;
Kenichi Nagata, Nishinomiya, JP;
Noboru Yamada, Hirakata, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
In forming steps of a recording layer or a dielectric layer of a phase change type optical disk by sputtering, a discharge gas which includes at least one of Kr gas and Xe gas is used. Alternatively, at least one of Ar gas and N.sub.2 gas may be further added to the discharge gas. Forming the recording layer or the dielectric layer of the phase change type optical disk in these discharge gases enables preventing of the introduction of the discharge gas into each layer during the forming steps. As a result, the void generation and growth in the recording layer is suppressed. Consequently, the deterioration of the cycle life characteristics due to repeated overwrite operations can be restrained. Therefore, high reliability and long life of the phase change type optical disk is attained.