The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 1996
Filed:
Jul. 12, 1994
Applicant:
Inventors:
Scot P Albright, Lakewood, CO (US);
Rhodes R Chamberlin, El Paso, TX (US);
Assignee:
Photon Energy, Inc., Golden, CO (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
136258 ; 136244 ; 136260 ; 136264 ; 437-4 ; 437-5 ; 257 51 ; 257 64 ; 257 75 ; 257184 ;
Abstract
A photovoltaic cell has an n-type polycrystalline layer and a p-type polycrystalline layer adjoining the n-type polycrystalline layer to form a photovoltaic junction. The p-type polycrystalline layer comprises a substantially planar layer portion having relatively large crystals adjoining the n-type polycrystalline layer. The planar layer portion includes oxidized impurities which contribute to obtainment of p-type electrical properties in the planar layer portion.
Albright, Scot. (1996). Photovoltaic cell having a p-type polycrystalline layer with large (U.S. Patent No. 5501744). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5501744
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile