The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 1996
Filed:
Feb. 28, 1994
Applicant:
Inventor:
Kiyoteru Kobayashi, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365185 ; 257316 ; 257321 ; 257324 ; 257637 ; 257638 ; 257640 ; 257649 ;
Abstract
A tunnel insulating film is formed on a main surface of a silicon substrate. A floating gate electrode is formed on the tunnel insulating film. A nitride layer formed of a material of the floating gate electrode is formed in the vicinity of an interface between the floating gate electrode and the tunnel insulating film located in a tunnel region A. Therefore, the write/erase characteristics of a non-volatile semiconductor memory device can be improved without decreasing the driving capability of a memory transistor at lower voltages.