The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 1996
Filed:
Nov. 12, 1992
Isao Kano, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In a semiconductor device having a first conductor layer (25) formed on a first insulator layer (23) and a second insulator layer (29) formed on the first conductor layer, a second conductor layer (31) has a primary conductor film (35) formed on the second insulator layer, a secondary conductor film (37) formed on the primary conductor film, and a ternary conductor film (63) formed on the secondary conductor film. The second insulator layer has a recessed surface (29b) which defines a contact perforation exposing a predetermined area of an upper surface (25a) of the first conductor layer. The secondary conductor film is further formed on the recessed surface and the predetermined area. The primary conductor film has a primary resistance value. The secondary conductor film has a secondary resistance value which is lower than the primary resistance value.