The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 1996
Filed:
Aug. 09, 1994
Applicant:
Inventors:
Joze Bevk, Summit, NJ (US);
Leonard C Feldman, Berkeley Heights, NJ (US);
Hans-Joachim L Gossmann, Summit, NJ (US);
Henry S Luftman, Emmaus, PA (US);
Ran-Hong Yan, Holmdel, NJ (US);
Assignee:
AT&T Corp., Murray Hill, NJ (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437131 ; 437106 ; 437987 ; 437 40 ;
Abstract
A process for making a MOS device on a silicon substrate includes the step of forming a buried layer of germanium-silicon alloy in the substrate, or, alternatively, a buried layer of silicon enclosed between thin, germanium-rich layers. This buried layer is doped with boron, and tends to confine the boron during annealing and oxidation steps. The process includes a step of exposing the substrate to an oxidizing atmosphere such that an oxide layer 10 .ANG.-500 .ANG. thick is grown on the substrate.