The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 1996
Filed:
May. 09, 1994
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of forming a deposited semiconductor film, comprising the steps of using a target containing semiconductor material to be deposited, an inert gas containing hydrogen at 0.1 at % or more and sputtering energy of a high frequency of 50 MHz or higher, and employing a reactive sputtering method, wherein a sputter deposition process, in which a semiconductor film, the main component of which is the material to be deposited and the thickness of which is 10 nm or thinner, is formed on a substrate, and an irradiation process, in which a surface of the deposited film is irradiated with plasma in an atmosphere containing hydrogen, are alternately repeated, and a DC or high frequency bias voltage is applied to said target and/or said substrate.