The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 1996
Filed:
May. 03, 1994
Applicant:
Inventors:
Jun-ichi Nishizawa, Sendai, JP;
Kenji Yamamoto, Chiba, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
1566431 ; 1566471 ; 1566511 ; 1566621 ;
Abstract
A semiconductor material to be etched is held in a reaction chamber at a predetermined temperature. A reactive etching gas such as a chlorine gas is introduced into the reaction chamber for a first period of time. Thereafter, the reaction chamber is evacuated for a second period of time, and ultraviolet radiation is applied to the semiconductor material for a third period of time within the second period of time for thereby etching the semiconductor material to a depth on the order of a molecular or atomic layer.