The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 1996
Filed:
Dec. 23, 1994
Jong H Lee, Taegu, KR;
Kyung Pook National University Sensor Technology Research Center, both of, KR;
Mando Machinery Corporation, both of, KR;
Abstract
A method for fabricating an 8-beam bridge-type silicon acceleration sensor omprises the steps of: growing a silicon oxide layer on the top surface of the silicon substrate; forming an n.sup.+ diffusion region in the substrate by successively performing the process of opening a diffusion window in the silicon oxide layer, implanting n.sup.+ impurities in the silicon substrate through the diffusion window, and evenly diffusing the n.sup.+ impurities into the substrate; removing the silicon oxide layer, and then growing an epitaxial layer thereon; forming a plurality of piezo-resistors in the epitaxial layer by successively performing the process of growing an oxide layer on the epitaxial layer, implanting impurities, and then evenly diffusing the impurities; removing the silicon oxide layer; forming a porous silicon layer from the n.sup.+ diffusion region by performing an anodic reaction in HF solution; loading a mass on the epitaxial layer; and, forming an air-gap in the substrate by etching the porous silicon layer.