The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 1996
Filed:
Sep. 29, 1993
Applicant:
Inventors:
John D Walker, Colorado Springs, CO (US);
Samuel C Gioia, Colorado Springs, CO (US);
Assignee:
NCR Corporation, Dayton, OH (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257336 ; 257350 ; 257408 ; 257536 ; 257580 ; 257657 ; 437 27 ; 437 30 ; 437 40 ; 437913 ;
Abstract
A field effect transistor with improved electrostatic discharge (ESD) protection has a source, a channel underlying a gate electrode and a drain. The drain includes a lightly doped ballast resistor extending across the width of the drain and separating two other drain sub-regions. One drain sub-region is located between the ballast resistor and the channel, the other drain sub-region is opposite the resistor and connected to an exterior device. The ballast resistor laterally distributes current along the width of the drain during an ESD pulse, which reduces local peak current density and reduces damage.