The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 1996
Filed:
Jul. 06, 1992
Sungtae Kim, Seoul, KR;
Soohan Choi, Kyungi-do, KR;
Abstract
A semiconductor device and a manufacturing method thereof are disclpsed, the semiconductor device comprising: a first conductive layer; an oxide layer formed upon the first conductive layer; a nitride layer composed of multiple sublayers formed upon the oxide layer; another oxide layer formed upon the nitride layer in the form of multiple sublayers; and a second conductive layer formed upon the structure obtained through the preceding steps. Due to the unique feature of the nitride layer composed of multiple sublayers, the electrical characteristics of the semiconductor device according to the present invention is improved, and the nitride layer according to the present invention is widely applicable to semiconductor devices.