The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 1996
Filed:
Nov. 25, 1992
Applicant:
Inventors:
Tetsuo Gocho, Kanagawa, JP;
Hideaki Hayakawa, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 67 ; 437228 ;
Abstract
A method of forming trench isolation including a burying step of burying trenches by a deposition means for conducting etching and deposition simultaneously and a polishing step of flattening a burying material by polishing is conducted by disposing an isotropic etching step, a multi-layered etching stopper and a protrusion unifying structure. Polishing can be attained with satisfactory flatness uniformly or with no polishing residue even in a portion to be polished in which the etching stopper layer is distributed unevenly. The method can be applied to manufacture of a semiconductor device or the like.