The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 1996
Filed:
Jan. 27, 1993
Hidenao Tanaka, Tokyo, JP;
Akinori Watabe, Saitama, JP;
Junichi Shimada, Saitama, JP;
Yoshitada Katagiri, Tokyo, JP;
Yoshio Suzuki, Tokyo, JP;
Abstract
A semiconductor laser apparatus includes a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a second electrode, and a pair of resonator mirrors. The semiconductor substrate has a first electrode on one surface. The first cladding layer is formed on the other surface of the semiconductor substrate. The active layer is placed on the cladding layer. The second cladding layer is placed on the active layer. The second electrode is placed on the second cladding layer. The pair of resonator mirrors are placed in a waveguide direction perpendicular to the surfaces of the semiconductor substrate to oppose each other. The active layer is constituted by a quantum well layer having a tensilely strain. The second electrode is separated into portions not less than two portions.