The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 1996
Filed:
Sep. 13, 1994
Applicant:
Inventors:
Katsuyoshi Fukuda, Yokosuka, JP;
Fumio Nakata, Urayasu, JP;
Keitaro Shigenaka, Hachioji, JP;
Keijiro Hirahara, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kanagawa, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257613 ; 257615 ; 257184 ; 257189 ; 257441 ;
Abstract
A compound semiconductor device suitable for an infrared ray detector comprises a substrate composed of indium antimonide (InSb), a first conductive layer deposited on the substrate and composed of tin-indium antimonide represented by the formula Sn.sub.x (InSb).sub.1-x, where 0.05.ltoreq.x.ltoreq.0.3, a second conductive layer that is a semiconductor region (active region) formed on the first conductive layer, and electrode provided on the second conductive layer, and a surface protective film formed on the first conductive layer except for the electrode portions.