The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 1996
Filed:
Jan. 24, 1994
Osamu Sakamoto, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device includes a polycrystalline silicon layer formed on a silicon layer with an oxide film therebetween, an interlayer insulating layer formed to cover the surface of the silicon layer and the surface of the polycrystalline silicon layer, and a silicon plug layer formed in an embedded manner in a contact hole in the interlayer insulating layer to be directly connected to the surface of an end portion of the polycrystalline silicon layer and the surface of the silicon layer in the proximity of the end portion of the polycrystalline silicon layer. The polycrystalline silicon layer and the silicon plug layer have the same type of conductivity. By this interconnection structure, the semiconductor device is improved in the patterning accuracy of the contact portion of a multilayer stacked interconnection. Furthermore, an ohmic contact between conductive interconnection layers can be realized with relatively simple manufacturing steps without occurrence of a voltage drop caused by a pn junction.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile