The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 1996
Filed:
Nov. 13, 1989
Sony Corporation, Tokyo, JP;
Abstract
A semiconductor device using interference effects of electron waves passing through a multichannel, wherein the multichannel is formed by a Dirac-delta-doped layer. A method of manufacturing a semiconductor device comprising the steps of: selectively forming a region of a predetermined crystallographic orientation onto a semiconductor substrate; and alternately growing the first semiconductor layer and the second semiconductor layer whose electron affinity is smaller than that of the first semiconductor layer onto the region of the predetermined crystallographic orientation by a vapor-phase growth method so as to have a convex shape in a manner such that an area of an upper layer is smaller. A semiconductor device in which a channel portion comprising a zigzag fine line is provided between a source and a drain.