The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 1996
Filed:
Jul. 05, 1994
Applicant:
Inventor:
Shih-Wei Sun, Austin, TX (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 67 ; 437 62 ; 437974 ; 148D / ; 148D / ;
Abstract
An insulating layer is formed over a first substrate. Trenches are formed within a second substrate, and those trenches are filled with an insulating layer. The two substrate are bonded at their insulating layers. The portion of the second substrate away from the trenches is removed to form semiconductor regions over the insulating layer of the first substrate. Embodiments of the present invention allow better thickness control for SOI regions and lower leakage current compared to SOI layers that use LOCOS-type field isolation.