The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 1996
Filed:
Jan. 28, 1994
John A Herb, Palo Alto, CA (US);
John M Pinneo, Redwood City, CA (US);
Clayton F Gardinier, San Francisco, CA (US);
Crystallume, San Jose, CA (US);
Abstract
A method for growing a diamond film, substantially free of voids, having an average crystallite size greater than about 15 microns, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1, and a diamond-to-graphite Raman ratio greater than about 25, includes the steps of preparing a substrate by abrasion with diamond particles; placing the substrate in a CVD reactor; depositing diamond during a first deposition stage by providing an atmosphere consisting essentially of a mixture of about 200 sccm H.sub.2 and 10 sccm CH.sub.4, at a pressure of about 90 Torr, providing between about 1,800 and 1,950 watts of microwave power at a frequency of about 2.45 GHz to ignite and sustain a plasma in the region of said substrate, and maintaining the substrate at a temperature of between about 625.degree. C. and 675.degree. C. for a period of time sufficient to form a diamond layer which is substantially continuous; depositing a diamond during a second deposition stage by providing an atmosphere consisting essentially of a mixture of about 200 sccm H.sub.2, 4.6 sccm CO, and 9 ccm of CH.sub.4 at a pressure of about 90 Torr, providing between about 1,800 and 1,950 watts of microwave power at a frequency of between about 2.45 GHz and maintaining said substrate material at a temperature of between about 625.degree. C. and 675.degree. C. for a period of time sufficient to form a diamond layer having a desired thickness; and removing the substrate material from said CVD reactor.