The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 1996
Filed:
Oct. 18, 1994
Haruki Kurihara, Tokyo, JP;
Hatsumi Matsuura, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
According to a semiconductor laser device of the present invention, the thickness and carrier concentration of a current blocking layer are set so as to cause a punch through on the current blocking layer when the semiconductor laser device is driven at a current which is one to ten times as large as a maximum rated value of a DC driving current. Both a light absorbing layer and a photocurrent blocking layer are formed between the current blocking layer and a second clad layer in order to prevent a light turn-on phenomenon from occurring. The light absorbing layer contacts the second clad layer and is constituted of a semiconductor crystal of a p-type conductivity type, which is undoped or has a low concentration. The photocurrent blocking layer contacts the current blocking layer and is constituted of a semiconductor crystal of the p-type conductivity type. If the band gaps of the light absorbing layer, photocurrent blocking layer, and active layer are represented by E.sub.ab, E.sub.ocb, and E.sub.ga, respectively, the following relationships are satisfied E.sub.ab .ltoreq.E.sub.ga, E.sub.ocb >E.sub.ga.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile