The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 1996

Filed:

May. 05, 1995
Applicant:
Inventor:

Junkei Goto, Ooita, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ;
U.S. Cl.
CPC ...
326 81 ; 326-9 ; 326 83 ;
Abstract

The current paths of the P-channel transistor, P-channel transistor, and N-channel transistor are connected in series between the power source V.sub.DD and the ground. The inverter circuit is constituted by the transistors. The node of the inverter circuit is connected to an end of the current path of the N-channel transistor. Another end of the current path of the N-channel transistor is connected to the input node. The transistors are of the enhancement type. If the electric potential higher than the power source V.sub.DD is supplied to the input node, the voltage of the node is lower than that of the power source V.sub.DD by the threshold voltage (V.sub.THN) and the transistors are protected from destruction.


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