The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 1996

Filed:

May. 26, 1993
Applicant:
Inventors:

Hiromasa Funakoshi, Hirakata, JP;

Takahiro Yamada, Hirakata, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257239 ; 257249 ; 257250 ; 257300 ;
Abstract

An electric charge detecting apparatus comprising vertical CCD, horizontal CCD and floating diffusion amplifier comprised of floating diffusion layer and source follower amplifier comprising a MOS transistor wherein a buffer electrode is arranged at one end of a gate electrode of the MOS transistor, the gate electrode is formed within an active region of the MOS transistor, a contact hole is provided for connecting a polysilicon layer arranged on a charge-voltage transformer and the source follow or plural P wells are formed and one of them is arranged under a wiring connecting the charge-voltage transformer and the source follower and connected to a source of a drive transistor. Said electric charge detecting apparatus further comprising, P.sup.+ region arranged under a field oxide film on which an output signal wiring from the source follower is electrically isolated from another P.sup.+ region or no P.sup.+ regions are provided under the field oxide film.


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