The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 1996
Filed:
May. 23, 1995
Motorola, Inc., Schaumburg, IL (US);
Abstract
An EEPROM memory array includes a plurality of memory cells having a floating gate electrode (22) formed as a sidewall spacer adjacent to a control gate electrode (20). Source and drain regions (12, 14) reside in a semiconductor substrate (10) and define a segmented channel region (16) therebetween. A select gate electrode (18) overlies a first channel region (24) and separates the floating gate electrode (2) from the source region (12). The control gate electrode (20) overlies a third channeI region (28) and separates the floating gate electrode (22) from the drain region (14). The floating gate electrode (22) overlies a second channel region (26) and is separated therefrom by a thin tunnel oxide layer (42). The EEPROM device of the invention can be programmed by either source side injection, or by Fowler-Nordheim tunneling. Additionally, a process is provided for the fabrication of an EEPROM array utilizing adjacent select gate electrodes (18, 18') as a doping mask.