The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 1996
Filed:
Jul. 15, 1994
Yoshikazu Hori, Kobe, JP;
Keisuke Koga, Uji, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
The invention is a field-emission element having a cathode with a sharp apex and a gate with an aperture diameter less than 1 .mu.m that is fabricated by covering a silicon substrate with a silicon oxide layer, forming an etching mask of 1.0 .mu.m diameter from a silicon oxide layer by photolithography, wet-etching the etching mask to form a minute etching mask of less diameter, dry etching the substrate to form a cylindrical solid structure, followed by anisotropic etching to form a couple of minute conical-shaped structures facing each other and connected by their respective tops, vacuum evaporating around the minute structures an insulating layer and thereon a conducting layer for use as a gate electrode, and etching the minute structure to lift off the upper part of the minute conical shaped structures.