Process and apparatus for controlled synthesis and in-situ single

Abstract

The present invention is a process and apparatus for the synthesis and growth of single crystals of phosphorus compounds starting with the elemental materials in a single furnace without external exposure. The apparatus of the present invention is a crystal growth furnace heated by RF coils. Inside the furnace is a susceptor for holding a crucible. Above the crucible is selectively positioned a phosphorus improved injector. The non-phosphorus materials are placed in the crucible and melted to a desired temperature. The phosphorus material previously placed within the injector is heated by the radiant heat from the crucible to drive the phosphorus vapor into the melt through a tube. This is closely controlled by noting the temperature within the injector and adjusting the height of the injector above the melt to control the temperature within the phosphorus material. After the formation of the stoichiometric melt, the seed is inserted into the melt for crystal growth if so desired. A further improvement to the above apparatus is the use of an improved injector having a cover and a shield thereabout. The injector and cover have a central hole through which the seed is inserted. The injector is moved vertically within the cover to provide the proper temperature therein.