The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 1996
Filed:
Jan. 10, 1995
Applicant:
Inventor:
Keiichi Sano, Osaka, JP;
Assignee:
Sanyo Electric Co., Ltd., Moriguchi, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
136258 ; 148 332 ; 257 75 ; 437-4 ;
Abstract
A polycrystalline silicon film is prepared by forming an amorphous silicon film containing hydrogen and having an intensity ratio TA/TO of at least 0.5 of TA peak intensity to TO peak intensity in a Raman spectrum, and then heat treating the amorphous silicon film for converting the same to a polycrystalline silicon film. The polycrystalline silicon film has improved characteristics as a photoelectric conversion layer in a photovoltaic device.