The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 1996
Filed:
Jun. 01, 1993
David R Helms, Liverpool, NY (US);
Michael J Fithian, Liverpool, NY (US);
Martin Marietta Corporation, Syracuse, NY (US);
Abstract
A low power consumption amplifier that is essentially insensitive to the process used to fabricate the active devices of the amplifier employs feedback to minimize variations in electrical characteristics of the devices. For weight-sensitive microwave applications, a high electron mobility transistor (HEMT) or a pseudomorphic high electron mobility transistor (PHEMT) may be selected as an active device for each stage of the amplifier. HEMTs and PHEMTs typically exhibit greater device gain than do MESFETs, especially at the upper portion of X-band and above, so that a HEMT- or PHEMT-based stage of an amplifier where additional overall gain is required, can be achieved without significantly adversely affecting power consumption demands, and attendant electrical energy storage/generation requirements while achieving and/or maintaining an overall flat gain characteristic of the amplifier.