The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 1996
Filed:
Jun. 13, 1994
Applicant:
Inventors:
Clinton D Van Siclen, Idaho Falls, ID (US);
Richard N Wright, Idaho Falls, ID (US);
Assignee:
Lockheed Idaho Technologies Company, Idaho Falls, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G21C / ;
U.S. Cl.
CPC ...
376310 ; 376314 ;
Abstract
A method for enhancing the diffusion of gas bubbles or voids attached to impurity precipitates, and biasing their direction of migration out of the host metal (or metal alloy) by applying a temperature gradient across the host metal (or metal alloy). In the preferred embodiment of the present invention, the impurity metal is insoluble in the host metal and has a melting point lower than the melting point of the host material. Also, preferably the impurity metal is lead or indium and the host metal is aluminum or a metal alloy.