The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 1996
Filed:
Apr. 18, 1994
Mikio Sakurai, Hyogo, JP;
Kenji Tokami, Hyogo, JP;
Kazuhiro Sakemi, Hyogo, JP;
Yutaka Ikeda, Hyogo, JP;
Yoshinori Inoue, Hyogo, JP;
Takeshi Kajimoto, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Mitsubishi Electric Engineering Co., Ltd., Tokyo, JP;
Abstract
A semiconductor memory device includes a pull up circuit (811) for pulling up a potential of a first node (812), a pull down circuit (813) for pulling down the potential of the first node, an inverter circuit (814b) having its input connected to a first input node (814a) connected to the first node (812) and its output connected to a first output node (814c) and operating with a boosted potential Vpp, and a p channel MOS transistor (814d) connected between a boosted potential node (50c) and the first input node (814a), with its gate electrode connected to the first output node (814c). The memory device provides a signal having a higher level than the supply potential with smaller area of layout.