The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 1996
Filed:
Jan. 19, 1993
Shigeru Shimada, Hoya, JP;
Michael Saniei, Sunnyvale, CA (US);
Balaji Krishnamachary, Mountain View, CA (US);
Hitachi, Ltd., Tokyo, JP;
VLSI Technology Incorporated, San Jose, CA (US);
Abstract
In extracting parameters for use in circuit simulation of an IC device having a plurality of insulated gate field-effect transistors (IGFETs), layout data for patterns for the IC device are prepared. The patterns include gate patterns for the IGFETs, at least one of which is a bent gate pattern such that drain and source regions are defined on opposite sides of the bent gate pattern. An index symbol data is added to the layout data, which is for the bent gate pattern, to thereby form designed pattern data. For higher accuracy of the circuit simulation, the index symbol data in the designed pattern data is detected and used to produce parameters concerning the gate patterns for the IGFETs, thereby contributing to determination of a capability of controlling electric current in the IGFETs.