The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 1996
Filed:
May. 20, 1993
Applicant:
Inventors:
Assignee:
Seiko Instruments Inc., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257369 ; 257376 ; 257463 ;
Abstract
The semiconductor device contains a CMOS transistor pair comprised of a P channel MOS transistor having a polysilicon gate 4 and an N channel MOS transistor having a polysilicon gate. The MOS transistor has a channel dope layer 5 localized in a vicinity of a surface of a channel region just below a gate electrode. This channel dope layer 5 has a quite shallow p-n junction depth xj effective to suppress a leak current. Thereby, an amount of impurity concentration in the surface of the channel region can be reduced to improve a subthreshold characteristics of the MOS transistor and to enable a low voltage and high speed operation under suppressing a leakage current.