The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 1996
Filed:
Oct. 06, 1994
Hagop Injeyan, Glendale, CA (US);
Terry L Holcomb, Torrance, CA (US);
TRW Inc., Redondo Beach, CA (US);
Abstract
An ultracompact array of microlasers in which Q-switching is performed by intracavity electroabsorptive modulators, to provide an array of relatively high-power beams with good beam quality and other beam characteristics. The microlasers are optically pumped by light beams from an array of semiconductor diode lasers, each of which is individually controlled by a separate electrode. Light from the diode lasers is coupled directly into a slab of solid-state crystal material, such as Nd:YVO.sub.4 (neodymium:yttrium vanadate), in which laser action takes place. The solid state material in part defines an array of laser cavities and an array of individually controllable Q-switching elements is integrated into the cavities, permitting Q-switching of each of the array elements. The Q-switching elements are electroabsorptive modulators that permit extremely rapid switching of the microlaser elements and provide output pulses of relatively high peak powers.