The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 1996
Filed:
Feb. 11, 1993
Applicant:
Inventor:
Nobuhiro Kuwata, Yokohama, JP;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257194 ; 257 24 ; 257 27 ; 257192 ;
Abstract
A high speed transistor featured by a wide operation range and a high gain has a channel layer of a three-layer structure wherein undoped GaInAs layers are arranged above and beneath a GaAs layer. The GaAs layer includes at least one n-type delta doped layer. A cap layer, which is an undoped GaAs layer, and a buffer layer are formed above and beneath the channel layer on the substrate. A gate electrode and a source region, a drain region, a source electrode and a drain electrode which are self-aligned with respect to the gate electrode, also are formed.
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Kuwata, Nobuhiro. (1996). Semiconductor device with delta-doped layer in channel region (U.S. Patent No. 5488237). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5488237
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile