The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 1996
Filed:
Apr. 28, 1994
Ronald T Fulks, Mountain View, CA (US);
Xerox Corporation, Stamford, CT (US);
Abstract
A thin-film structure includes conductive lines that cross in a crossover region. A first insulating layer covers the lower conductive line. A second insulating layer is sufficiently thick to isolate signals in the lines and to prevent coupling. Each of the lower conductive line and the second insulating layer can have an edge. A smoothing layer is formed over the edges so that the upper conductive line forms continuously, providing an electrical connection between two points on opposite sides of the edges. The insulating layers can be nitride, separated by an undoped layer of amorphous silicon, so that the same layer sequence can be used as in a thin-film transistor. The smoothing layer can be n+ doped amorphous silicon. The conductive lines can be scan and data lines in an AMLCD or other array.