The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 1996
Filed:
Sep. 21, 1994
Nobuyuki Kokubo, Hyogo, JP;
Kazuya Ikeda, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A memory cell region is provided with a pair of driver transistors as well as a pair of access transistors. Each of the access transistors is formed of a field effect transistor having a gate electrode layer. An insulating layer is formed over the driver transistors and access transistors, and is provided with contact holes located within the memory cell region and reaching the gate electrode layers. Conductive layers are formed on the insulating layer, and are in contact with the gate electrode layers through the contact holes. Thereby, a memory cell structure of an SRAM has a small planar layout area and thus is suitable to high integration.