The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 1996
Filed:
Sep. 02, 1994
Syoichi Kakimoto, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of making a semiconductor laser includes forming spaced apart insulating films on a semiconductor substrate of a first conductivity type defining a central groove and two regions transverse to, contiguous to, and continuous with the central groove, the semiconductor substrate being exposed in the groove and the two regions; successively, epitaxially growing a first cladding layer of a first conductivity type, an active layer including a multiple quantum well structure having alternating well and barrier layers, a second cladding layer of a second conductivity type, opposite the first conductivity type, and a contact layer of the second conductivity type on the semiconductor substrate using a process producing thicker well layers in the groove than in the two regions; and forming first and second electrodes on the substrate and the contact layer, respectively.