The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 1996
Filed:
Jun. 22, 1994
Applicant:
Inventors:
Keiichi Sano, Moriguchi, JP;
Yoichiro Aya, Moriguchi, JP;
Assignee:
Sanyo Electric Co., Ltd., Moriguchi, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
136258 ; 148 332 ; 257 51 ; 257 64 ; 257 75 ; 428620 ; 437-4 ; 437109 ; 437247 ; 437967 ;
Abstract
A polysilicon thin film obtained by using a heat treatment to crystallize an amorphous silicon thin film formed on a substrate has substantially no grain boundaries present in the direction of its thickness, i.e. substantially no grain boundaries extend across the thickness direction. Such a polysilicon thin film can be prepared by forming a doped first amorphous silicon layer containing dispersed crystal phases on a substrate, forming an undoped second amorphous silicon layer on the first amorphous silicon layer, and crystallizing the first and second amorphous silicon layers by heat treatment.